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設備
LPE Liquid Phase
Crystal System
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Liquid phase method
(LPE method)
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Wafer size: 6, 8
inches
High Temperature Hydrogen
Sintering Furnace
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Used in sintering process of
electrostatic chuck for precision
parts for semiconductor
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Technical parameter
Operating temperature: 1650 ℃
Temperature uniformity: ±8 ℃
Vacuum degree: 2000 Pa
High efficiency intake sys tem,
moisture system
Monocrystal Furnace
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For the growth of 6-12 inch
solar monocrystal silicon
ingot
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Technical parameter
Ingot diameter: 6-12 inches
Pulling speed: >1.6mm/min
Crucible rising speed: 0.02-
1mm/min
温度センサ Temperature Sensors
熱 電 対
測 温 抵 抗 体
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